IndiumV3, Main, Repository, bibRecord, 013B39

Persistent photoconductivity in Ga1-xInxNyAs1-y

Identifieur interne : 013B39 ( Main/Repository ); précédent : 013B38; suivant : 013B40

Persistent photoconductivity in Ga1-xInxNyAs1-y

Auteurs : RBID : Pascal:99-0426528

Descripteurs français

Pascal (Inist)
- 7350P, 7155E, 7361E, 7350J, Etude expérimentale, Gallium nitrure, Indium nitrure, Gallium arséniure, Photoconductivité, Matériau dopé, Epitaxie phase vapeur, Effet Hall, Dépendance température, Niveau énergie, Ionisation, Indium composé, Semiconducteur III-V, Couche épitaxique semiconductrice, Niveau énergie profond, Densité trou.

English descriptors

KwdEn :
- Deep energy levels, Doped materials, Energy levels, Experimental study, Gallium arsenides, Gallium nitrides, Hall effect, Hole density, III-V semiconductors, Indium compounds, Indium nitrides, Ionization, Photoconductivity, Semiconductor epitaxial layers, Temperature dependence, VPE.

Abstract

Electrical properties of unintentionally doped p-type Ga_0.95In_0.05N_0.013As_0.987 quaternary alloys grown by metal-organic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity (PPC) has been observed in this material at temperatures T<320K. The PPC buildup and decay kinetics have been systematically measured at different temperatures and photoexcitation energies and formulated in the context of lattice-relaxed deep levels (or AX-like centers). The parameters which characterize the AX centers in GaInNAs, namely, the thermal and optical ionization energies, hole capture barrier, and the Stokes shift, have been determined. Our results indicate that AX-like deep levels strongly influence the electronic properties of the GaInNAs quaternary system. © 1999 American Institute of Physics.

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Le document en format XML

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In<sub>x</sub>
N<sub>y</sub>
As<sub>1-y</sub>
</title>
<author><name sortKey="Li, J Z" uniqKey="Li J">J. Z. Li</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1>
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<author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name>
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<author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name>
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<author><name sortKey="Geisz, J F" uniqKey="Geisz J">J. F. Geisz</name>
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<author><name sortKey="Kurtz, Sarah R" uniqKey="Kurtz S">Sarah R. Kurtz</name>
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<term>Gallium nitrides</term>
<term>Hall effect</term>
<term>Hole density</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Indium nitrides</term>
<term>Ionization</term>
<term>Photoconductivity</term>
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<term>Temperature dependence</term>
<term>VPE</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>7350P</term>
<term>7155E</term>
<term>7361E</term>
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<term>Indium nitrure</term>
<term>Gallium arséniure</term>
<term>Photoconductivité</term>
<term>Matériau dopé</term>
<term>Epitaxie phase vapeur</term>
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<term>Dépendance température</term>
<term>Niveau énergie</term>
<term>Ionisation</term>
<term>Indium composé</term>
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<front><div type="abstract" xml:lang="en">Electrical properties of unintentionally doped p-type Ga<sub>0.95</sub>
In<sub>0.05</sub>
N<sub>0.013</sub>
As<sub>0.987</sub>
 quaternary alloys grown by metal-organic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity (PPC) has been observed in this material at temperatures T<320K. The PPC buildup and decay kinetics have been systematically measured at different temperatures and photoexcitation energies and formulated in the context of lattice-relaxed deep levels (or AX-like centers). The parameters which characterize the AX centers in GaInNAs, namely, the thermal and optical ionization energies, hole capture barrier, and the Stokes shift, have been determined. Our results indicate that AX-like deep levels strongly influence the electronic properties of the GaInNAs quaternary system. © 1999 American Institute of Physics.</div>
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<fA11 i1="01" i2="1"><s1>LI (J. Z.)</s1>
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<fA11 i1="05" i2="1"><s1>KURTZ (Sarah R.)</s1>
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<fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1>
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<fA14 i1="02"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401</s1>
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<fC01 i1="01" l="ENG"><s0>Electrical properties of unintentionally doped p-type Ga<sub>0.95</sub>
In<sub>0.05</sub>
N<sub>0.013</sub>
As<sub>0.987</sub>
 quaternary alloys grown by metal-organic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity (PPC) has been observed in this material at temperatures T<320K. The PPC buildup and decay kinetics have been systematically measured at different temperatures and photoexcitation energies and formulated in the context of lattice-relaxed deep levels (or AX-like centers). The parameters which characterize the AX centers in GaInNAs, namely, the thermal and optical ionization energies, hole capture barrier, and the Stokes shift, have been determined. Our results indicate that AX-like deep levels strongly influence the electronic properties of the GaInNAs quaternary system. © 1999 American Institute of Physics.</s0>
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<fC03 i1="20" i2="3" l="FRE"><s0>Densité trou</s0>
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Persistent photoconductivity in Ga1-xInxNyAs1-y

Persistent photoconductivity in Ga1-xInxNyAs1-y

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri